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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V
- Series：*
- Mfr：onsemi
- Package：Bulk
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The onsemi 2SC3912-TB-E is an NPN silicon RF transistor designed for high-frequency applications. It features a collector-emitter breakdown voltage of 15 V and a maximum continuous collector current of 70 mA. The device operates with a transition frequency of 4.5 GHz and dissipates up to 200 mW of power. Packaged in a compact SOT-23 (TO-236-3) surface-mount housing, it supports a junction temperature range up to 150°C. Key electrical characteristics include a minimum DC current gain of 100 at 10 mA and 5 V, and a typical noise figure of 1.9 dB at 1 GHz.
Feature Summary
- Optimized for low-noise amplification in radio frequency circuits
- High transition frequency suitable for UHF band operations
- Compact surface-mount packaging for space-constrained designs
Applications
- Low-noise amplifier stages in communication equipment
- RF signal processing in mobile devices
- UHF receiver front-end modules
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and material declarations prior to integration. Cross-reference the component marking code with official documentation to prevent counterfeit substitution during sourcing.
Selection Notes
Select this component when a small-form-factor NPN transistor is required for UHF frequencies with strict noise figure constraints. Ensure the design accounts for the 200 mW power dissipation limit and thermal management within the SOT-23 package. Validate that the 15 V breakdown voltage aligns with the circuit's operating headroom requirements.
Part Context
This part belongs to onsemi's discrete RF transistor portfolio, specifically engineered for high-frequency analog applications. It serves as a standard solution for designers needing reliable NPN performance in compact surface-mount formats without sacrificing RF gain or noise characteristics.
Replacement Considerations
Direct substitutes include the 2SC5227A-5-TB-E, which shares similar RF parameters but may differ in specific gain or noise metrics. Verify pinout compatibility and thermal resistance values before swapping components in existing layouts.
