2SC4027S-H

Single Bipolar Transistors Overview

The onsemi 2SC4027S-H is a silicon NPN single bipolar junction transistor (BJT) designed for switching applications. It features a maximum collector current of 1.5 A and a collector-emitter breakdown voltage of 160 V. The device operates in a surface-mount TO-252-3 package with a power dissipation rating of 1 W. Key electrical characteristics include a transition frequency of 120 MHz, a DC current gain ranging from 140 to 280, and a collector-emitter saturation voltage of 130 mV. The component supports a maximum operating temperature of +150°C.

Single Bipolar Transistors Feature Summary

• High-voltage capability suitable for demanding switching environments
• Optimized for fast switching performance with high transition frequency
• Robust thermal stability supporting elevated operating temperatures

Single Bipolar Transistors Applications

• Switching regulator circuits
• General-purpose switching applications
• Power supply output stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm exact binning or packaging variations. Confirm RoHS compliance status through the latest datasheet revision. Check for end-of-life notifications as discontinuance affects long-term availability. Ensure the ordering code matches the required package type and lead configuration before procurement.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN BJT is required for compact surface-mount designs. The 160 V rating provides headroom for inductive loads. The 1.5 A current capacity suits moderate power switching tasks. Evaluate thermal management requirements given the 1 W dissipation limit in the small outline package.

Single Bipolar Transistors Part Context

This part belongs to the 2SC4027 series of triple-diffused planar silicon transistors. The series is characterized by high reliability and wide safe operating area. These devices are engineered for use in switching regulators where fast turn-off times and high breakdown voltages are critical design parameters.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for verified equivalents. Cross-reference pinouts and thermal resistance values carefully. Verify that alternative components meet the 160 V and 1.5 A specifications without compromising switching speed.