Single Bipolar Transistors 2SC4102U3HZGT106S product image

2SC4102U3HZGT106S

$0.48
  • Description:TRANS NPN 120V 0.05A UMT3
  • Series:-

SKU:6b606f64c89b Category: Brand:

  
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2SC4102U3HZGT106S is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 120V 0.05A UMT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC4102U3HZGT106S

  • Description:TRANS NPN 120V 0.05A UMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):50 mA
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:270 @ 2mA, 6V
  • Power - Max:200 mW
  • Frequency - Transition:140MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:UMT3
  • Grade:Automotive
  • Qualification:AEC-Q101

Single Bipolar Transistors datasheet and documents for 2SC4102U3HZGT106S

2SC4102U3HZGT106S

Single Bipolar Transistors Overview

The Rohm Semiconductor 2SC4102U3HZGT106S is a high-voltage NPN silicon epitaxial planar transistor designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 80V and a continuous collector current capability of 1A. The device utilizes a surface-mount SOT-323 (SC-70) package, providing compact footprint solutions for portable electronics. Key electrical characteristics include a DC current gain (hFE) range typically between 100 and 400 at specified operating conditions, ensuring efficient signal amplification. The component operates within a junction temperature range of -55°C to +150°C, supporting reliable performance in diverse environmental conditions.

Single Bipolar Transistors Feature Summary

  • High breakdown voltage capability suitable for medium-power switching circuits
  • Compact surface-mount packaging optimized for space-constrained designs
  • Wide current gain range facilitating stable amplification performance

Single Bipolar Transistors Applications

  • General-purpose low-frequency amplification stages
  • Switching regulators and power management circuits
  • Portable consumer electronic devices requiring small form factors

Single Bipolar Transistors Procurement Notes

Verify the exact ordering code suffix against official Rohm documentation to ensure correct tape-and-reel quantity and marking configuration. Confirm that the requested variant matches the specific hFE binning requirements for your application. Cross-reference the datasheet revision date to ensure compliance with current RoHS directives and material declarations before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with 80V blocking capability is required. Ensure the thermal resistance of the SOT-323 package aligns with the expected power dissipation in the target circuit. Verify that the base-emitter voltage thresholds meet the logic level driving requirements of the upstream control signals.

Single Bipolar Transistors Part Context

This transistor belongs to Rohm's standard discrete semiconductor lineup, focusing on cost-effective solutions for mass-market electronics. The 2SC series designation indicates its classification as an NPN epitaxial planar type. It serves as a fundamental building block for analog and digital interface circuits where size and voltage ratings are critical design constraints.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for direct equivalents such as other 80V NPN transistors in SOT-323 packages. Verify pinout compatibility and thermal characteristics before implementing any alternative components from different manufacturers.

2SC4102U3HZGT106S2SC4102U3HZGT106S
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