2SC4105N

Single Bipolar Transistors Overview

The Sanyo 2SC4105N is a power NPN silicon bipolar transistor designed for high-reliability switching applications. It features a maximum collector current of 4A and a collector-emitter breakdown voltage of 400V. The device utilizes a TO-220AB flange mount package with plastic/epoxy encapsulation, supporting up to 40W of power dissipation. It has a minimum DC current gain (hFE) of 30 and operates at temperatures up to 150°C.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability for robust operation in high-voltage circuits
• Flange mount package design facilitating efficient heat dissipation
• Optimized for high-speed switching performance

Single Bipolar Transistors Applications

• Switching regulator circuits
• High-voltage power supply designs
• Industrial motor control systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official Sanyo documentation to confirm exact electrical characteristics, as variants like -RA or -RC may differ in hFE. Ensure the component matches the required TO-220AB physical dimensions and pinout configuration for your PCB layout. Confirm manufacturer authenticity through authorized channels to guarantee reliability standards.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with 400V blocking capability and 4A continuous current handling is required. The TO-220AB package is suitable for applications needing direct heatsink mounting. Consider the minimum hFE specification to ensure adequate base drive current for saturation in switching modes.

Single Bipolar Transistors Part Context

This part belongs to the Sanyo power transistor family, specifically engineered for general-purpose high-voltage switching. It shares the core die specifications with other 2SC4105 variants but differs in grading suffixes that define current gain ranges. The TO-220AB form factor is standard for medium-power discrete semiconductor devices.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with generic equivalents by matching V(BR)CEO, I(C), and package type strictly.