2SC4115STPS

Single Bipolar Transistors Overview

The 2SC4115STPS is an NPN silicon epitaxial planar low-frequency transistor manufactured by ROHM. It features a collector-emitter breakdown voltage of 20V and a continuous collector current rating of 2A, with a peak pulse current capability of 5A. The device offers a typical collector-emitter saturation voltage of 0.2V at high drive conditions and a transition frequency of 290MHz. DC current gain ranges from 120 to 560 depending on the specific suffix classification. It is housed in the SPT (EIAJ SC-72) through-hole package and supports a maximum junction temperature of 150°C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching
• High DC current gain characteristics across operating ranges
• Designed as a complementary component to the 2SA1585S PNP transistor

Single Bipolar Transistors Applications

• General-purpose audio visual equipment
• Office automation devices
• Communication devices
• Electronic appliances
• Amusement devices

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix to confirm the hFE binning class, as performance varies between R, Q, and S grades. Confirm the package type matches the required footprint, as variations exist between standard SPT and alternative lead forms. Ensure the application environment remains within the specified general-use scope, avoiding automotive or medical sectors where this component lacks qualification. Check for updated replacement recommendations if the specific suffix is discontinued.

Single Bipolar Transistors Selection Notes

Select the appropriate hFE suffix based on circuit gain requirements: 'R' for 180-390, 'Q' for 120-270, and 'S' for 270-560. Consider the thermal management capabilities, as the device dissipates up to 0.4W. Evaluate the base drive requirements to maintain the low saturation voltage characteristic. Ensure the operating voltage does not exceed the 20V collector-emitter limit under all transient conditions.

Single Bipolar Transistors Part Context

This component belongs to ROHM's lineup of low-frequency NPN silicon transistors designed for general electronic applications. It serves as a functional complement to the 2SA1585S PNP counterpart, facilitating push-pull amplifier configurations. The device utilizes an epitaxial planar structure to ensure stable electrical characteristics and reliability in standard consumer electronics environments.

Single Bipolar Transistors Replacement Considerations

Consult official documentation for direct substitutes. Verify pinout compatibility and electrical ratings before integrating any alternative components into existing designs.

Single Bipolar Transistors FAQ

What are the available hFE classifications for this transistor?

The device is classified into three groups: 'R' (180 to 390), 'Q' (120 to 270), and 'S' (270 to 560).

Is this component suitable for automotive applications?

No, the product is intended for general-use electronic equipment and is not designed for automotive systems.

What is the maximum collector current rating?

The continuous DC collector current is rated at 2A, with a single pulse current capability of 5A.