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2SC4134S-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 100V 1A TP. Review the specifications below when checking this part for your BOM.
The onsemi 2SC4134S-E is an NPN silicon bipolar junction transistor (BJT) designed for high-voltage switching applications. It features a collector-emitter voltage rating of 100 V and a continuous collector current capacity of 1 A. The device offers a power dissipation capability of 800 mW and an emitter-base voltage of 6 V. Packaged in a TO-251-3 surface-mount case, it provides low saturation voltage characteristics suitable for efficient circuit operation.
Verify component authenticity through authorized distribution channels to ensure compliance with RoHS standards. Confirm package integrity upon receipt as the device utilizes a surface-mount form factor. Cross-reference datasheet specifications against design requirements prior to integration. Ensure storage conditions align with manufacturer recommendations to maintain reliability.
Select this component when designing circuits requiring robust NPN switching performance at 100 V. The TO-251-3 package facilitates automated assembly processes. Evaluate thermal management needs based on the 800 mW dissipation limit. Consider the fast switching characteristics for applications demanding rapid transition times between states.
This part belongs to the 2SC4134 series of bipolar transistors manufactured by onsemi. It represents a specific variant within the family optimized for surface-mount technology. The device complements complementary PNP counterparts in push-pull configurations. Its design supports compact system architectures due to its slim package profile.
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs before attempting substitution. Consult official manufacturer resources for potential equivalents if direct replacement is required.
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