2SC4159D

Single Bipolar Transistors Overview

The Sanyo 2SC4159D is a silicon NPN epitaxial planar transistor designed for high-frequency applications. It features a small-signal amplification capability with a transition frequency (fT) of 300 MHz typical at VCE=5V, IC=10mA. The device offers a collector current rating of 100 mA and a collector-emitter voltage breakdown of 60 V. Power dissipation is rated at 300 mW in free air. The component utilizes a compact surface-mount package suitable for portable electronic devices requiring low power consumption and stable performance.

Single Bipolar Transistors Feature Summary

• High-frequency operation capability for RF signal processing
• Low power consumption design optimized for battery-operated equipment
• Stable thermal characteristics due to epitaxial planar construction

Single Bipolar Transistors Applications

• RF amplifier stages in communication devices
• Signal processing circuits in portable electronics
• Oscillator circuits requiring stable high-frequency performance

Single Bipolar Transistors Procurement Notes

Verify the manufacturer part number against official Sanyo Semiconductor datasheets to ensure authenticity. Confirm that the ordering suffix matches the required packaging configuration. Check for any specific handling instructions related to electrostatic discharge sensitivity during storage and assembly processes.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring NPN transistors with moderate gain and high-frequency response. Ensure the operating voltage and current limits remain within the specified ratings to maintain reliability. Consider thermal management requirements if multiple units are placed closely on the PCB.

Single Bipolar Transistors Part Context

This transistor belongs to Sanyo's lineup of small-signal silicon NPN transistors intended for general-purpose high-frequency use. It complements other models in the series by offering balanced performance between speed and power efficiency. The device is commonly used in consumer electronics where space constraints and energy efficiency are critical design factors.

Single Bipolar Transistors Replacement Considerations

Direct substitutes may include equivalent NPN transistors from other manufacturers with matching fT, VCEO, and IC ratings. Verify pinout compatibility and package dimensions before substitution. Cross-reference electrical parameters such as hFE ranges and saturation voltages to ensure circuit functionality remains unaffected.