2SC4227-T1-R34-A

Overview

The 2SC4227-T1-R34-A is an NPN epitaxial silicon RF transistor designed for high-frequency low-noise amplification in VHF and UHF applications. It utilizes a 3-pin Super Minimold (EIAJ SC-70) surface mount package suitable for high-density assembly. The device operates with a collector-to-emitter voltage of 10 V and a maximum collector current of 65 mA, dissipating up to 150 mW. Key electrical characteristics at VCE = 3 V and IC = 7 mA include a typical noise figure of 1.4 dB, an insertion power gain of 12 dB at 1 GHz, and a gain bandwidth product of 7.0 GHz. The 'R34' suffix indicates a DC current gain (hFE) classification range of 70 to 150.

Feature Summary

• Optimized for high-frequency low-noise amplification in VHF and UHF bands
• Features a compact 3-pin Super Minimold package for high-density surface mount assembly
• Provides high gain and low noise performance under low supply voltage conditions

Applications

• VHF and UHF low noise amplifier circuits
• High-frequency signal processing systems
• Communication equipment requiring low-noise front-end stages

Procurement Notes

Verify the specific ordering suffix against official Renesas Electronics documentation to confirm the hFE binning and taping configuration. Confirm that the component meets the required quality grade for the intended application environment. Ensure compliance with export control regulations if applicable. Contact a Renesas Electronics sales office for availability status as this component may be subject to discontinuation or lifecycle changes.

Selection Notes

Select the R34 variant when a DC current gain between 70 and 150 is required for the design. Ensure the operating point stays within the absolute maximum ratings, specifically the 10 V collector-to-emitter voltage and 65 mA collector current limits. Consider the thermal dissipation capabilities of the SC-70 package and the ambient temperature constraints for the total power dissipation rating.

Part Context

This component is part of the 2SC4227 series manufactured by Renesas Electronics Corporation, formerly NEC Compound Semiconductor Devices. The datasheet PU10451EJ01V0DS documents the technical specifications for this NPN epitaxial silicon RF transistor. The manufacturer merged with Renesas Technology Corporation in April 2010, transferring all business operations.

Replacement Considerations

Consult official Renesas Electronics resources for confirmed substitute part numbers. Verify pin compatibility and electrical parameters before substituting.