2SC4485S-AN

Single Bipolar Transistors Overview

The 2SC4485S-AN is a single NPN bipolar junction transistor manufactured by onsemi. It features a maximum collector current of 1A and a collector-emitter voltage rating of 50V. The device is housed in a surface-mount SOT-323 package, identified by the JESD-30 code R-PSIP-T3. It operates with a maximum junction temperature of 150°C and utilizes plastic/epoxy as the primary encapsulation material. This component is designed for general-purpose switching and amplification applications within discrete semiconductor circuits.

Single Bipolar Transistors Feature Summary

• NPN bipolar junction transistor configuration
• Surface-mount SOT-323 packaging
• High thermal stability up to 150°C

Single Bipolar Transistors Applications

• General-purpose signal amplification
• Electronic switching circuits
• Discrete semiconductor modules

Single Bipolar Transistors Procurement Notes

Verify the manufacturer marking and date code against official onsemi documentation to ensure authenticity. Confirm that the received components match the specified SOT-323 package dimensions and pinout configuration. Request detailed test reports or datasheets from authorized distributors to validate electrical parameters prior to integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with 1A continuous current capability and 50V breakdown voltage is required. The SOT-323 form factor suits space-constrained PCB layouts. Ensure the application does not exceed the 150°C maximum junction temperature limit during operation.

Single Bipolar Transistors Part Context

This part belongs to onsemi's discrete bipolar transistor portfolio. It serves as a standard solution for low-power switching tasks where small footprint and reliable NPN characteristics are prioritized over high-frequency performance.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference guides for direct substitutes. Verify pin compatibility and electrical ratings before substituting with alternative NPN transistors in similar packages.