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Product Detailed Parameters
- Description：RF TRANS NPN 11V 3.2GHZ EMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：11V
- Frequency - Transition：3.2GHz
- Noise Figure (dB Typ @ f)：3.5dB @ 500MHz
- Gain：-
- Power - Max：150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：56 @ 5mA, 10V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：EMT3
- Grade：-
- Qualification：-
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Overview
The ROHM Semiconductor 2SC4726TLN is a high-frequency NPN bipolar junction transistor designed for RF applications. It operates in an SOT-416 (EMT3) surface-mount package with a collector-emitter voltage of 11 V and a continuous collector current of 50 mA. The device features a typical transition frequency of 3.2 GHz, low output capacitance of 0.8 pF, and a noise figure of 3.5 dB at 500 MHz. Power dissipation is rated at 150 mW, with a maximum junction temperature of 150 °C.
Feature Summary
- High transition frequency suitable for RF amplification
- Low base resistance and output capacitance for signal integrity
- Optimized noise figure for sensitive receiver stages
Applications
- High frequency amplifier circuits
- Frequency converter modules
- Frequency mixer stages
- Local oscillator configurations
Procurement Notes
Verify the specific ordering suffix against the official datasheet to confirm packaging details such as tape width and reel size. Ensure that ESD protection measures are implemented during handling and storage, as the component is electrostatic sensitive. Confirm ambient temperature derating requirements before finalizing procurement specifications.
Selection Notes
Select this component when a high transition frequency exceeding 1.4 GHz is required alongside low noise performance. Verify that the 11 V collector-emitter voltage rating accommodates the circuit's peak operating conditions. Consider the 150 mW power dissipation limit and ensure adequate thermal management on the PCB land area to maintain reliability under steady-state loading.
Part Context
This part belongs to ROHM's high-frequency amplifier transistor series, utilizing the SOT-416 surface-mount package. It is engineered specifically for radio frequency applications where small physical footprint and high gain are critical. The device integrates optimized internal parameters to minimize parasitic effects at gigahertz frequencies.
Replacement Considerations
Consult the official datasheet for direct pin-compatible substitutes within the same manufacturer family. Verify that any alternative component matches the 3.2 GHz transition frequency and 11 V voltage rating to ensure circuit compatibility without redesign.
