2SC4793,HFEF(M

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC4793,HFEF(M) is a silicon NPN epitaxial planar transistor designed for power amplifier applications. It features a collector-emitter voltage of 230 V, a continuous collector current of 1 A, and a transition frequency of 100 MHz. The device provides a DC current gain ranging from 100 to 320 at 100 mA. It operates with a junction temperature up to 150 °C and dissipates 2 W of power at 25 °C case temperature. The component utilizes a TO-220F package.

Single Bipolar Transistors Feature Summary

• High transition frequency suitable for high-speed switching and amplification
• Complementary pairing available with the 2SA1837 PNP transistor
• Robust thermal performance supporting power amplifier environments

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify the exact suffix configuration against the manufacturer's datasheet to ensure correct lead plating and packaging specifications. Confirm RoHS compliance status directly with the supplier or through official documentation prior to procurement. Ensure the ordering code matches the required electrical characteristics and physical package dimensions for your specific design implementation.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage handling capabilities combined with moderate power dissipation. The high transition frequency makes it appropriate for applications demanding fast signal processing. Consider the complementary 2SA1837 if a matched push-pull configuration is necessary for the amplifier design requirements.

Single Bipolar Transistors Part Context

This part belongs to the broader category of bipolar junction transistors manufactured by Toshiba Semiconductor and Storage. It serves as a specialized discrete semiconductor device intended for general electronics applications. The component is distinct from integrated circuits and optocouplers within the same product portfolio.

Single Bipolar Transistors Replacement Considerations

The 2SA1837 is documented as the complementary PNP counterpart. Verify pinout compatibility and absolute maximum ratings before substituting with other NPN transistors offering similar voltage and current specifications.

Single Bipolar Transistors FAQ

What is the typical transition frequency of the 2SC4793?

The typical transition frequency (fT) is 100 MHz.

Is the 2SC4793 compatible with the 2SA1837?

Yes, the datasheet specifies that the 2SC4793 is complementary to the 2SA1837.

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 230 V.