2SC4793,NSEIKIF(J

Single Bipolar Transistors Overview

The Toshiba 2SC4793 is an NPN silicon epitaxial planar transistor designed for power amplifier applications. It features a collector-emitter voltage of 230 V and a continuous collector current rating of 1 A. The device achieves a typical transition frequency of 100 MHz, supporting high-frequency driver stage operations. Electrical characteristics include a DC current gain ranging from 100 to 320 at 100 mA, with a maximum collector dissipation of 20 W when case temperature is maintained at 25°C.

Single Bipolar Transistors Feature Summary

• High transition frequency capability for RF signal processing
• Complementary pairing with the 2SA1837 PNP transistor
• Robust thermal performance with 20 W power dissipation under specified conditions

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver stage amplification
• General electronics equipment

Single Bipolar Transistors Procurement Notes

Verify component authenticity through official Toshiba Semiconductor and Storage channels or authorized distributors. Confirm RoHS compliance status directly with the supplier, as regulatory adherence varies by production lot. Ensure the ordering suffix matches the required lead-free plating specifications. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-voltage handling up to 230 V combined with significant current capacity. The 100 MHz transition frequency makes it suitable for intermediate frequency stages. Consider the TO-220F package for effective heat sinking in power amplifier topologies. Verify that the complementary 2SA1837 is available if symmetrical push-pull configurations are required for the application.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba Silicon NPN Epitaxial Type series, specifically engineered for power applications. It serves as a high-performance alternative in general-purpose discrete semiconductor markets. The device is manufactured using epitaxial planar technology to ensure stable electrical characteristics across varying operating temperatures.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1837 as the complementary PNP counterpart. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the typical transition frequency of the 2SC4793?

The typical transition frequency (fT) is 100 MHz, measured at VCE = 10 V and IC = 100 mA.

Is the 2SC4793 compatible with lead-free manufacturing processes?

Yes, the marking guide indicates that an 'A' line on the package denotes a lead-free finish or package.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is 230 V.