2SC4793,YHF(M

Single Bipolar Transistors Overview

The Toshiba 2SC4793 is a silicon NPN epitaxial planar transistor designed for power amplifier and driver stage applications. It features a high transition frequency of 100 MHz typical at VCE=10V, IC=100mA. Absolute maximum ratings include a collector-emitter voltage (VCEO) of 230V, collector current (IC) of 1A, and collector power dissipation (PC) of 20W at Tc=25°C. The device offers a DC current gain (hFE) range of 100 to 320 at IC=100mA. It is packaged in a JEDEC TO-126 style case with a weight of 1.7g.

Single Bipolar Transistors Feature Summary

• High transition frequency suitable for RF amplification tasks
• Complementary pairing available with the 2SA1837 PNP transistor
• Robust voltage handling capabilities for power switching applications

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver stage amplification
• General electronics equipment

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status by contacting sales representatives, as indicated in the datasheet restrictions. Ensure designs adhere to specified operating ranges and derating concepts found in the Toshiba Semiconductor Reliability Handbook to maintain long-term system stability and safety.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high voltage tolerance and moderate power handling. The complementary 2SA1837 facilitates push-pull configurations. Designers must account for thermal management, as power dissipation ratings are temperature-dependent. Verify that the required current gain falls within the specified 100-320 range for the intended operating point.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's discrete semiconductor lineup, specifically engineered for audio and RF power stages. It serves as a counterpart to the 2SA1837, enabling balanced circuit designs. The device utilizes an epitaxial planar process to achieve its electrical characteristics and reliability standards for general electronic equipment.

Single Bipolar Transistors Replacement Considerations

The 2SA1837 is documented as the complementary PNP counterpart. No other direct substitute part numbers are listed in the provided documentation. Engineers should verify pinout compatibility and electrical parameters when considering alternative manufacturers' components.

Single Bipolar Transistors FAQ

What is the typical transition frequency of the 2SC4793?

The typical transition frequency (fT) is 100 MHz, measured at VCE = 10 V and IC = 100 mA.

Is the 2SC4793 lead-free?

The marking guide indicates that an 'A' line on the package denotes a lead-free package or finish.

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 230 V, tested at IC = 10 mA and IB = 0.