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2SC4926YD-TL-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is TRANSISTOR NPN MPAK-4. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SC4926YD-TL-E
- Description：TRANSISTOR NPN MPAK-4
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SC4926YD-TL-E
Single Bipolar Transistors Overview
The 2SC4926YD-TL-E is a silicon NPN epitaxial transistor designed for VHF and UHF wideband amplifier applications. It features a high gain bandwidth product of 11 GHz typical, with a collector current rating of 50 mA and collector power dissipation of 150 mW. The device provides a typical power gain of 16.5 dB at 900 MHz and a noise figure of 1.1 dB under specified conditions. Packaged in the MPAK-4 format, it supports ultra-high frequency operations up to 2000 MHz.
Single Bipolar Transistors Feature Summary
- High gain bandwidth product optimized for ultra-high frequency band operations
- Low noise figure characteristics suitable for sensitive signal amplification
- High power gain performance in VHF and UHF wideband amplifier circuits
Single Bipolar Transistors Applications
- VHF wideband amplifier circuits
- UHF wideband amplifier circuits
- Ultra-high frequency signal processing systems
Single Bipolar Transistors Procurement Notes
Verify the specific ordering suffix TL-E against the manufacturer's latest datasheet to confirm package type and shipping container specifications. Confirm production status directly with Renesas Electronics sales offices prior to procurement, as availability may vary by grade or region. Ensure compliance with applicable export control laws and environmental directives such as RoHS before finalizing orders.
Single Bipolar Transistors Selection Notes
Select this component when designing circuits requiring high gain and low noise in the VHF/UHF spectrum. Evaluate thermal management requirements carefully, as the maximum collector power dissipation is limited to 150 mW. Ensure operating voltages remain within the 8 V collector-emitter limit and verify that the required collector current does not exceed the 50 mA absolute maximum rating for reliable operation.
Single Bipolar Transistors Part Context
This part belongs to the 2SC4926 series of silicon NPN epitaxial transistors manufactured by Renesas Electronics. It utilizes the MPAK-4 package (RENESAS Package code PLSP0004ZA-A) which includes four terminals: Collector, Emitter, Base, and Emitter1. The marking on the device body typically indicates 'YD–'.
Single Bipolar Transistors Replacement Considerations
Consult official Renesas documentation for verified substitute part numbers. No direct public substitutes are confirmed in the provided source material.
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