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The Toshiba 2SC4944-Y(TE85L,F) is a dual NPN epitaxial planar transistor utilizing the PCT process, designed for audio frequency general-purpose amplifier applications. It features a small surface-mount package with a total collector power dissipation of 200 mW at 25°C on an FR4 board. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 150 mA. The DC current gain (hFE) ranges from 120 to 240 for the Y classification. Electrical characteristics include a transition frequency of 80 MHz and a collector output capacitance of 3.5 pF.
Verify the specific ordering suffix against official Toshiba documentation to confirm lead-free status and environmental compliance. Confirm that the Y classification matches the required hFE range of 120 to 240 for your design specifications. Ensure thermal derating calculations account for the 200 mW limit on standard FR4 substrates.
Select this component when a dual NPN configuration is required for audio or low-frequency amplification. The Y grading provides a guaranteed hFE range of 120 to 240. Consider the complementary 2SA1873 if a matched pair is needed. Verify that the 50 V collector-emitter voltage rating meets the circuit's peak operating requirements.
This part belongs to the 2SC4944 series of silicon NPN epitaxial transistors manufactured using Toshiba's PCT process. The series is specifically engineered for audio frequency applications, offering high linearity and a compact form factor. The TE85L,F suffix indicates the specific tape-and-reel packaging and lead-free composition.
The datasheet explicitly identifies the 2SA1873 as the complementary PNP transistor for this series. No other direct substitutes are documented in the provided source material.