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The 2SC4965YV-TL-E is an RF small signal bipolar transistor manufactured by Renesas Electronics Corporation. It is a silicon NPN device designed for ultra-high frequency band applications. The component features a maximum collector current (Ic) of 0.1 A and a collector-emitter maximum voltage (Vceo) of 8 V. It exhibits a maximum collector capacitance of 1.6 pF. The transistor is housed in a CMPAK-3 package, which corresponds to a small outline surface-mount configuration with three gull-wing terminals. This single-element device is primarily intended for switching functions within high-frequency electronic circuits.
Verify the specific suffix 'TL-E' against official Renesas documentation to confirm exact tape-and-reel specifications or regional compliance markings. Ensure the CMPAK-3 package dimensions match the target PCB footprint. Confirm RoHS compliance status through the manufacturer's latest product release notes before finalizing procurement orders.
Select this component when designing circuits requiring an NPN transistor capable of handling 0.1 A at ultra-high frequencies. The 8 V collector-emitter voltage rating limits suitability for higher voltage power stages. The CMPAK-3 surface-mount package requires appropriate soldering profiles for reliable joint formation during assembly processes.
This part belongs to the 2SC4965 series of RF transistors produced by Renesas Electronics. The series is characterized by its utility in high-frequency signal handling. The CMPAK-3 packaging provides a compact solution for modern surface-mount electronics. The device represents a standard discrete semiconductor solution for RF front-end and switching applications.
Consult official Renesas cross-reference lists for verified substitutes. Generic replacements must match the NPN polarity, 0.1 A current rating, 8 V voltage rating, and CMPAK-3 package form factor to ensure functional compatibility.