2SC5011-A

Overview

The 2SC5011-A is an NPN epitaxial silicon RF transistor designed for high-frequency low-noise amplification. It features a 4-pin Super Minimold package, suitable for surface-mount applications. Key electrical characteristics include a maximum collector current of 0.1 A and a collector-emitter voltage rating of 12 V. The device exhibits a typical gain bandwidth product (fT) of 6.5 GHz, enabling operation in ultra-high frequency bands. It supports low-voltage operation with a maximum base-collector capacitance of 0.9 pF, making it appropriate for compact RF circuit designs requiring high gain and minimal noise figure.

Feature Summary

• High gain bandwidth product optimized for ultra-high frequency signal processing
• Low noise performance combined with high gain for sensitive amplifier stages
• Compact 4-pin Super Minimold surface-mount package design
• Low voltage operational capability for power-efficient circuit integration

Applications

• High-frequency low-noise amplifier circuits
• Ultra-high frequency band signal processing systems
• Compact RF front-end modules requiring surface-mount components

Procurement Notes

Verify the specific ordering suffix (e.g., -T1, -T1EB) against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all required RoHS compliance standards for your target market. Cross-reference the pinout configuration, specifically noting that Pin 3 (Base) and Pin 4 (Emitter) orientation relative to the tape perforation side, to prevent assembly errors during PCB placement.

Selection Notes

Select this component when designing circuits that require a balance of high gain and low noise at frequencies up to 6.5 GHz. Ensure the application voltage remains within the 12 V collector-emitter limit and current stays below 0.1 A. Consider the thermal constraints of the small outline plastic package. Validate that the 4-pin footprint matches the PCB layout requirements for the Super Minimold form factor before finalizing the bill of materials.

Part Context

The 2SC5011 series belongs to NEC's lineup of NPN epitaxial silicon RF transistors. It is often cross-referenced with the NE85618 part number by Renesas Technology Corp. The device is manufactured using silicon epitaxial processes to achieve consistent high-frequency performance. It serves as a specialized discrete semiconductor solution for RF applications where standard general-purpose transistors lack sufficient bandwidth or noise performance.

Replacement Considerations

The NE85618 is a documented equivalent part number associated with this device family. Verify pin compatibility and electrical parameters against the official datasheet before substitution. Ensure that any replacement maintains the same 4-pin Super Minimold package dimensions to fit existing footprints.