SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CEL 2SC5012-T1-A is a silicon NPN single bipolar transistor designed for ultra-high frequency applications. It features a typical transition frequency (fT) of 9 GHz at a test frequency of 1 GHz and VCE of 8V. The device provides a typical noise figure of 1.2 dB and a maximum collector current of 65 mA. It utilizes an SOT-343 package, corresponding to JEITA equivalent part number NE68118.
Verify the specific ordering suffix against official manufacturer documentation to confirm exact binning or tape-and-reel specifications. Confirm that the component meets all relevant environmental compliance standards required for the target assembly process before finalizing procurement orders.
Select this component when a silicon NPN transistor with a 9 GHz transition frequency is required. Ensure the design accommodates the 65 mA maximum collector current limit. Verify that the SOT-343 package dimensions align with the printed circuit board layout constraints.
This component belongs to the CEL Silicon Bipolar Transistors family, specifically categorized under Single Transistors. It serves as a discrete semiconductor solution for RF applications, distinct from GaAs FETs or MMIC amplifiers offered by the same manufacturer.
The JEITA equivalent part number is NE68118. Cross-reference electrical parameters such as fT, NF, and package type when evaluating alternative suppliers or substitute components.
The JEITA equivalent part number is NE68118.
The typical transition frequency (fT) is 9 GHz, measured at a test frequency of 1 GHz.
The maximum collector current (Ic MAX) is 65 mA.