2SC5013-T1-A

Overview

The CEL 2SC5013-T1-A is a silicon NPN epitaxial RF transistor designed for high-frequency low-noise amplification. It operates in the ultra-high frequency band with a typical transition frequency (fT) of 10 GHz at a test frequency of 2 GHz and VCE of 6V. The device features a maximum collector-emitter voltage (VCEO) of 10V, a maximum collector current (Ic) of 35mA, and a typical noise figure of 1.8 dB. It provides a typical magnetic gain of 13 dB and a DC current gain (hFE) of 100. The component is housed in an SOT-343 package.

Feature Summary

• High gain bandwidth product optimized for ultra-high frequency applications
• Low noise figure suitable for sensitive receiver front-end stages
• Compact surface-mount package design

Applications

• High frequency low noise amplifier circuits
• Ultra-high frequency signal processing
• Wireless communication transceivers

Procurement Notes

Verify the specific JEITA equivalent designation NE68018 against the target system requirements. Confirm that the SOT-343 footprint matches the PCB layout constraints. Ensure the supply voltage does not exceed the 10V maximum rating during operation to maintain device reliability.

Selection Notes

Select this component when a silicon-based solution is required for frequencies up to 10 GHz with moderate power handling. Compare the 1.8 dB noise figure against GaAs alternatives if lower noise is critical. Verify that the 35mA maximum collector current meets the biasing requirements of the intended amplifier topology.

Part Context

This part belongs to the CEL Silicon Bipolar Transistors portfolio, specifically categorized under Single Transistors. It serves as a discrete alternative to integrated MMICs for custom RF front-end designs requiring specific biasing or impedance matching characteristics not available in standard amplifier ICs.

Replacement Considerations

The datasheet lists the JEITA equivalent part number as NE68018. Designers should verify pinout compatibility and electrical parameter tolerances before substituting with other NPN RF transistors from different manufacturers.