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The 2SC5066-O,LF is an NPN bipolar RF transistor manufactured by Toshiba Semiconductor and Storage. It is designed for VHF to UHF band low noise amplifier applications. The device features a maximum collector-emitter voltage of 12V and a maximum collector current of 30mA. It operates with a transition frequency of 7GHz and has a maximum power dissipation of 100mW. The component is housed in the SSM surface mount package and supports junction temperatures up to 125°C.
Verify the complete part number including the -O,LF suffix to ensure correct configuration. Confirm that the supplier provides official Toshiba documentation. Check for RoHS compliance status if required by your manufacturing standards. Ensure the source is authorized to guarantee component authenticity and traceability.
Select this component when designing amplifiers for VHF or UHF ranges requiring low noise performance. Consider the 12V voltage limit and 30mA current rating during circuit planning. The SSM package requires appropriate PCB land pattern design. Evaluate thermal management needs given the 100mW power dissipation constraint.
This transistor belongs to Toshiba's lineup of RF bipolar devices intended for high-frequency analog applications. It complements other models in the series offering similar electrical characteristics but potentially different pin configurations or packaging options. The product line targets communication equipment and broadcast infrastructure requiring stable RF performance.
The 2SC5066-Y,LF is a documented alternative within the same family. Verify pin compatibility and parameter equivalence before substitution. Ensure the replacement meets all original design specifications for voltage, current, and frequency.