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Product Detailed Parameters
- Description：RF 0.05A, NPN
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Transistor Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The 2SC5080ZD-TL is a small signal bipolar RF transistor designed for high-frequency amplifier applications. It features a high gain-bandwidth product with a typical fT of 13.5 GHz. The device provides high gain and low noise, characterized by a typical power gain (PG) of 18 dB and a noise figure (NF) of 1.1 dB at 900 MHz.
Feature Summary
- Optimized for high-frequency amplification tasks
- Delivers high gain performance with minimal signal degradation
- Engineered for low noise figure operation in sensitive circuits
Applications
- High-frequency amplifier stages
- Low-noise signal processing circuits
- RF front-end modules requiring high gain
Procurement Notes
Verify the specific manufacturer source, as Hitachi Semiconductor datasheets reference this part number. Confirm availability status directly with authorized distributors, as supply chain data may vary. Ensure the component meets the required frequency specifications for your design before integration.
Selection Notes
Select this component when designing circuits that require a balance of high gain and low noise at frequencies around 900 MHz to 2 GHz. Consider the 13.5 GHz gain-bandwidth product for broader RF applications. Evaluate thermal management requirements based on the operating conditions specified in the official documentation.
Part Context
This transistor belongs to the category of small signal bipolar transistors intended for RF use. It serves as a critical active element in amplification chains where signal integrity and frequency response are paramount. The device supports designs needing precise control over noise performance and gain stability.
Replacement Considerations
Consult official cross-reference lists or distributor databases for equivalent parts. Verify that any substitute matches the 13.5 GHz fT and 1.1 dB NF specifications to maintain circuit performance.
