2SC5087YTE85LF

Overview

The 2SC5087YTE85LF is an NPN RF bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It features a collector-emitter breakdown voltage of 12V and a transition frequency of 7GHz. The device supports a maximum power dissipation of 150mW and delivers a typical gain of 13dB with a noise figure of 1.1dB at 1GHz. It is housed in the SMQ surface-mount package, designed for high-frequency applications requiring low noise performance.

Feature Summary

• High-speed operation with a 7GHz transition frequency
• Low noise characteristics suitable for sensitive RF stages
• Compact SMQ surface-mount packaging

Applications

• RF amplifier circuits
• Low-noise amplifier (LNA) stages
• Wireless communication transceivers

Procurement Notes

Verify the specific suffix TE85LF against official Toshiba documentation to confirm tape-and-reel configuration. Ensure the SMQ package type matches the PCB footprint requirements. Cross-reference the 12V rating and 150mW power limits with the target circuit design constraints before finalizing procurement.

Selection Notes

Select this component when a 12V NPN BJT is required for frequencies up to 7GHz. Prioritize this part for designs needing a 1.1dB noise figure at 1GHz. Confirm that the SMQ package dimensions are compatible with the assembly process and that the thermal management strategy supports the 150mW dissipation limit.

Part Context

This part belongs to the Toshiba RF transistor portfolio, specifically categorized under Bipolar Junction Transistors for radio frequency use. It complements other high-frequency discrete devices in the manufacturer's lineup, offering a balance of gain and noise performance for compact wireless modules.

Replacement Considerations

Consult official Toshiba substitution guides for direct equivalents. Verify pinout compatibility and electrical parameters such as V(BR)CEO and fT if considering alternative manufacturers.