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The 2SC5095-O(TE85L,F) is an NPN silicon RF small signal transistor designed for ultra-high frequency applications. It utilizes a SC-70 surface-mount package with three pins. The device supports a maximum collector-emitter voltage of 10 V and a maximum collector current of 15 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 50 and a maximum collector capacitance of 0.85 pF. It operates within a temperature range up to 125°C and has a maximum power dissipation of 0.1 W.
Verify the specific suffix 'O' against official Toshiba documentation, as standard listings often reference the base model 2SC5095-R. Confirm availability status directly with authorized distributors, as component lifecycle states may vary by region. Ensure the TE85L reel format matches your automated assembly requirements before finalizing orders.
Select this component when a compact NPN transistor is required for UHF frequencies with strict size limitations. Compare hFE minimums and capacitance values against circuit requirements to ensure adequate gain and bandwidth. Verify that the 0.1 W power dissipation rating aligns with the thermal management capabilities of the target PCB layout.
This part belongs to the 2SC5095 series of RF transistors from Toshiba Semiconductor and Storage. The series is characterized by its suitability for high-frequency applications where low noise and small physical footprint are critical design constraints. The TE85L designation indicates a specific tape-and-reel packaging configuration used for surface-mount technology assembly.
Publicly confirmed substitute part numbers for the 2SC5095-O variant are not available in the provided source data. Consult manufacturer cross-reference guides for potential equivalents.