2SC5095-O(TE85L,F)

2SC5095-O(TE85L,F)

$0.34
  • Description:RF TRANS NPN 10V 10GHZ SC-70
  • Series:-

SKU:85c07f06c87e Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 10V 10GHZ SC-70
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:10GHz
  • Noise Figure (dB Typ @ f):1.8dB @ 2GHz
  • Gain:13dB ~ 7dB
  • Power - Max:100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 7mA, 6V
  • Current - Collector (Ic) (Max):15mA
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70
  • Grade:-
  • Qualification:-

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2SC5095-O(TE85L,F)

Overview

The 2SC5095-O(TE85L,F) is an NPN silicon RF small signal transistor designed for ultra-high frequency applications. It utilizes a SC-70 surface-mount package with three pins. The device supports a maximum collector-emitter voltage of 10 V and a maximum collector current of 15 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 50 and a maximum collector capacitance of 0.85 pF. It operates within a temperature range up to 125°C and has a maximum power dissipation of 0.1 W.

Feature Summary

  • Optimized for low noise performance in UHF band operations
  • Compact SC-70 surface-mount form factor for space-constrained designs
  • High-speed switching capability suitable for RF signal processing

Applications

  • UHF band amplification circuits
  • RF signal processing stages
  • Low noise amplifier modules

Procurement Notes

Verify the specific suffix 'O' against official Toshiba documentation, as standard listings often reference the base model 2SC5095-R. Confirm availability status directly with authorized distributors, as component lifecycle states may vary by region. Ensure the TE85L reel format matches your automated assembly requirements before finalizing orders.

Selection Notes

Select this component when a compact NPN transistor is required for UHF frequencies with strict size limitations. Compare hFE minimums and capacitance values against circuit requirements to ensure adequate gain and bandwidth. Verify that the 0.1 W power dissipation rating aligns with the thermal management capabilities of the target PCB layout.

Part Context

This part belongs to the 2SC5095 series of RF transistors from Toshiba Semiconductor and Storage. The series is characterized by its suitability for high-frequency applications where low noise and small physical footprint are critical design constraints. The TE85L designation indicates a specific tape-and-reel packaging configuration used for surface-mount technology assembly.

Replacement Considerations

Publicly confirmed substitute part numbers for the 2SC5095-O variant are not available in the provided source data. Consult manufacturer cross-reference guides for potential equivalents.

2SC5095-O(TE85L,F)2SC5095-O(TE85L,F)
$0.34
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