2SC5108-Y,LF

Overview

The 2SC5108-Y,LF is an NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage, specifically designed for Voltage Controlled Oscillator (VCO) applications. It operates in the Ultra High Frequency band with a maximum collector current of 0.03 A and a collector-emitter voltage rating of 10 V. The device features a minimum DC current gain (hFE) of 80 and a maximum collector capacitance of 0.9 pF. Packaged in a small outline R-PDSO-F3 format with three terminals, it supports operating temperatures up to 125 °C.

Feature Summary

• Optimized for high-frequency VCO circuit integration
• Low parasitic capacitance for signal integrity
• Compact surface-mount packaging

Applications

• Voltage Controlled Oscillators (VCO)
• Ultra High Frequency signal generation
• RF amplifier stages

Procurement Notes

Verify the specific suffix '-Y,LF' against official Toshiba documentation to confirm lead-free compliance and tape-and-reel specifications. Ensure the component matches the R-PDSO-F3 package outline and terminal configuration required for the target PCB layout. Cross-reference the manufacturer's latest datasheet to validate electrical parameters before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring low input capacitance and stable gain at ultra-high frequencies. The 10 V collector-emitter voltage limit dictates suitability for low-voltage RF systems. Verify that the 0.03 A current rating aligns with the oscillator's biasing requirements and thermal management capabilities within the small outline package constraints.

Part Context

This part belongs to Toshiba's discrete semiconductor transistor portfolio, focusing on RF performance. The 2SC series designation indicates an NPN epitaxial planar structure. The specific model targets niche RF applications where standard general-purpose transistors lack the necessary frequency response or capacitance characteristics for stable oscillation.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference data. Engineers must consult Toshiba's official replacement guide or equivalent RF transistor databases to identify compatible alternatives with matching hFE, Cobo, and fT specifications.