2SC5172(YAZK,Q,M)

Single Bipolar Transistors Overview

The Toshiba 2SC5172 is a silicon NPN triple-diffused transistor utilizing the PCT process. It features a collector-emitter breakdown voltage of 400 V and a DC collector current rating of 5 A. The device exhibits excellent switching performance with a maximum rise time of 0.5 μs and fall time of 0.3 μs at 2 A. Electrical characteristics include a minimum DC current gain of 20 at 0.5 A, a collector cut-off current of 20 μA, and a collector-base breakdown voltage of 600 V. It operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• Triple-diffused structure using PCT process for high-speed switching
• High collector breakdown voltage capability of 400 V
• Optimized switching times for high-frequency applications

Single Bipolar Transistors Applications

• Switching regulator circuits
• High-voltage switching applications
• High-speed DC-DC converters

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status by contacting sales representatives as specified in the documentation. Ensure designs adhere to absolute maximum ratings and derating guidelines found in the Toshiba Semiconductor Reliability Handbook to maintain operational safety and longevity.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-voltage handling and rapid switching transitions. Evaluate thermal management requirements against the 2 W dissipation limit at ambient conditions versus 25 W at case temperature. Verify that load currents remain within the safe operating area curves provided in the datasheet to prevent device failure during transient events.

Single Bipolar Transistors Part Context

This device belongs to the family of high-voltage NPN transistors designed for power conversion tasks. It utilizes a TO-220 package variant suitable for through-hole mounting. The part number suffixes indicate specific ordering or packaging variations without altering the fundamental electrical specifications defined in the primary datasheet.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the verified source material.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is 1.0 V when tested at a collector current of 2 A and a base current of 0.25 A.

How does the DC current gain vary with collector current?

The minimum DC current gain is 13 at 1 mA and increases to a minimum of 20 at 0.5 A, with a maximum rated gain of 65 under the same 0.5 A condition.

What are the storage time specifications?

The storage time is typically 2.0 μs under test conditions involving a base drive of 0.25 A and a reverse base drive of -0.5 A with a duty cycle less than 1%.