2SC5198

Single Bipolar Transistors Overview

The EVVO 2SC5198 is a silicon NPN triple-diffused transistor designed for power amplifier applications. It features a minimum collector-emitter breakdown voltage of 140 V and supports a maximum collector current of 10 A. The device handles up to 100 W of collector power dissipation at a case temperature of 25°C, with a junction temperature rating of 150°C. It exhibits a transition frequency of 30 MHz and a DC current gain ranging from 35 to 160 depending on operating conditions. The component utilizes a TO-3PS (TO-3P) package.

Single Bipolar Transistors Feature Summary

• Complementary pairing with the 2SA1941 PNP transistor for balanced audio output stages
• High-voltage capability with a minimum 140 V collector-emitter breakdown rating
• Triple-diffused silicon construction optimized for high-fidelity audio frequency amplification

Single Bipolar Transistors Applications

• Output stages for 100-W high-fidelity audio frequency amplifiers
• Power amplifier circuits requiring high collector voltage ratings
• Complementary push-pull configurations in audio systems

Single Bipolar Transistors Procurement Notes

Verify that the ordered part number matches the specific EVVO manufacturing designation. Confirm the package type corresponds to the TO-3PS specification provided in the datasheet. Ensure that thermal management requirements align with the absolute maximum ratings, particularly regarding junction temperature limits under heavy load conditions to maintain reliability.

Single Bipolar Transistors Selection Notes

Select this component when designing audio power amplifiers that require a robust NPN output transistor with high voltage tolerance. The device is specifically recommended for complementary use with the 2SA1941. Consider the thermal resistance characteristics and ensure adequate heat sinking to manage the 100 W dissipation capability effectively within the specified temperature range.

Single Bipolar Transistors Part Context

The 2SC5198 belongs to a family of silicon NPN power transistors intended for audio power amplifier applications. It serves as the NPN counterpart to the 2SA1941 PNP transistor, forming a matched pair for symmetrical signal handling. The triple-diffused technology provides stability and performance suitable for high-fidelity sound reproduction systems.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: BD245D, 2SC2706, 2SC2837, 2SC3182.