2SC5226-4-TL-E

$0.15

Description：BIP NPN 70MA 10V FT=7G
Series：*

SKU:beafb5aa05c4 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

2SC5226-4-TL-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP NPN 70MA 10V FT=7G. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC5226-4-TL-E

Description：BIP NPN 70MA 10V FT=7G
Series：*
Mfr：onsemi
Package：Bulk
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC5226-4-TL-E

2SC5226-4-TL-E

Single Bipolar Transistors Overview

The onsemi 2SC5226-4-TL-E is a single NPN bipolar RF transistor designed for surface-mount applications. It utilizes the SC-70 (SOT-323) package, measuring 1.6 x 0.8 x 0.75mm. The device features a maximum collector-emitter voltage of 10V and a transition frequency of 7GHz. It supports a maximum DC collector current of 70mA with a power dissipation rating of 150mW. The component operates within a junction temperature range up to 150°C and includes a typical noise figure of 1dB at 1GHz.

Single Bipolar Transistors Feature Summary

Optimized for high-frequency radio frequency signal processing and amplification
Compact surface-mount footprint suitable for space-constrained circuit designs
Low noise performance characteristics for sensitive receiver front-ends

Single Bipolar Transistors Applications

RF amplifier stages in communication modules
Signal conditioning in wireless transmission equipment
High-frequency oscillator circuits

Single Bipolar Transistors Procurement Notes

Verify the exact suffix against official manufacturer documentation to confirm pinout and electrical specifications. Ensure the selected variant matches the required SC-70 package dimensions and thermal ratings. Cross-reference the part number with authorized distributor catalogs to validate authenticity and compliance with current RoHS standards before integration into production schedules.

Single Bipolar Transistors Selection Notes

Select this component when a low-voltage, high-speed NPN transistor is required for RF applications. The 7GHz transition frequency makes it suitable for UHF bands. Consider the 150mW power limit and 10V breakdown voltage when designing biasing networks. The small form factor aids in miniaturizing portable electronic devices without compromising high-frequency performance.

Single Bipolar Transistors Part Context

This device belongs to the family of small-signal RF transistors manufactured by onsemi. It serves as a discrete active component within semiconductor arrays used for signal integrity management. The technology leverages silicon planar processes to achieve high gain and low noise figures essential for modern wireless infrastructure and consumer electronics.