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The onsemi 2SC5277A-2-TL-E is an NPN bipolar junction transistor designed for surface mount applications. It features a maximum DC collector current of 30 mA and a collector-emitter voltage rating of 10 V, with a collector-base voltage of 20 V. The device supports a maximum power dissipation of 100 mW and operates up to a frequency of 7 GHz. Housed in the compact SMCP package measuring 1.6 x 0.8 x 0.75 mm, it includes three pins and withstands junction temperatures up to +150 °C.
Verify the specific ordering suffix and manufacturer lot codes against official onsemi documentation to ensure component authenticity. Confirm that the SMCP package dimensions align with your PCB footprint requirements before finalizing procurement decisions.
Select this component when designing circuits that require NPN amplification at frequencies approaching 7 GHz with limited board space. Ensure the design accommodates the 100 mW power dissipation limit and the 10 V collector-emitter voltage constraint for reliable long-term operation.
This part belongs to the 2SC5277 series of RF transistors from onsemi. It shares similar electrical characteristics with other variants in the family but is distinguished by its specific SMCP packaging and pin configuration, tailored for automated surface mount assembly processes.
Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with alternative RF NPN transistors by matching the 7 GHz frequency response, 30 mA current rating, and SMCP package dimensions.