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The CEL 2SC5336-AZ is a silicon NPN RF bipolar transistor designed for high-frequency applications up to 6.5 GHz. It features a typical noise figure of 1.1 dB and a maximum transition frequency (fT) of 6.5 GHz at a test frequency of 1 GHz. The device operates with a maximum collector-emitter voltage (VCEO) of 12 V and a maximum collector current (Ic) of 100 mA. Packaged in the M02 SOT-89 format, it provides a typical DC current gain (hFE) of 120.
Verify component authenticity through authorized CEL distributors or certified suppliers. Confirm package markings match the M02 SOT-89 specification. Check for recent Product Change Notices regarding manufacturing updates. Ensure storage conditions comply with moisture sensitivity levels for surface-mount devices.
Select this component when a low-noise silicon NPN transistor is required for frequencies around 1 GHz. Compare noise figures against GaAs alternatives if lower noise is critical. Verify that the 12 V breakdown voltage meets circuit requirements. Consider the SOT-89 package size for PCB layout constraints.
This part belongs to CEL's Silicon Bipolar Transistor family, specifically the NE461M02 series. It serves as a discrete solution for RF amplification tasks where silicon technology offers cost advantages over compound semiconductors. The M02 suffix indicates the specific SOT-89 plastic surface-mount package configuration.
The NE461M02 is the JEITA equivalent designation for this component. Direct pin-compatible replacements may include other NPN transistors from the same manufacturer with similar fT and noise specifications. Verify electrical parameters before substitution.