2SC5336-AZ

2SC5336-AZ

  • Description:RF TRANS NPN 12V 6.5GHZ
  • Series:-

SKU:e22cdf73203d Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 6.5GHZ
  • Series:-
  • Mfr:CEL
  • Package:Strip
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:6.5GHz
  • Noise Figure (dB Typ @ f):1.8dB @ 1GHz
  • Gain:12dB
  • Power - Max:1.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 20mA, 10V
  • Current - Collector (Ic) (Max):100mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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2SC5336-AZ

Overview

The CEL 2SC5336-AZ is a silicon NPN RF bipolar transistor designed for high-frequency applications up to 6.5 GHz. It features a typical noise figure of 1.1 dB and a maximum transition frequency (fT) of 6.5 GHz at a test frequency of 1 GHz. The device operates with a maximum collector-emitter voltage (VCEO) of 12 V and a maximum collector current (Ic) of 100 mA. Packaged in the M02 SOT-89 format, it provides a typical DC current gain (hFE) of 120.

Feature Summary

  • High-frequency operation capability suitable for wireless communication systems
  • Low noise figure performance optimized for signal reception stages
  • Robust power handling within specified voltage and current limits

Applications

  • Low Noise Amplifiers (LNAs)
  • RF front-end modules
  • Wireless connectivity devices

Procurement Notes

Verify component authenticity through authorized CEL distributors or certified suppliers. Confirm package markings match the M02 SOT-89 specification. Check for recent Product Change Notices regarding manufacturing updates. Ensure storage conditions comply with moisture sensitivity levels for surface-mount devices.

Selection Notes

Select this component when a low-noise silicon NPN transistor is required for frequencies around 1 GHz. Compare noise figures against GaAs alternatives if lower noise is critical. Verify that the 12 V breakdown voltage meets circuit requirements. Consider the SOT-89 package size for PCB layout constraints.

Part Context

This part belongs to CEL's Silicon Bipolar Transistor family, specifically the NE461M02 series. It serves as a discrete solution for RF amplification tasks where silicon technology offers cost advantages over compound semiconductors. The M02 suffix indicates the specific SOT-89 plastic surface-mount package configuration.

Replacement Considerations

The NE461M02 is the JEITA equivalent designation for this component. Direct pin-compatible replacements may include other NPN transistors from the same manufacturer with similar fT and noise specifications. Verify electrical parameters before substitution.

2SC5336-AZ2SC5336-AZ

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