Single Bipolar Transistors 2SC5343-G-AP product image

2SC5343-G-AP

  • Description:TRANS NPN 50V 0.15A TO-92
  • Series:-

SKU:ae0422767155 Category: Brand:

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2SC5343-G-AP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS NPN 50V 0.15A TO-92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC5343-G-AP

  • Description:TRANS NPN 50V 0.15A TO-92
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2A, 6V
  • Power - Max:625 mW
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC5343-G-AP

2SC5343-G-AP

Single Bipolar Transistors Overview

The MCC 2SC5343-G-AP is an NPN silicon transistor in a TO-92 package. It features a collector-emitter voltage of 50 V, collector current of 150 mA, and power dissipation of 625 mW. The transition frequency is 80 MHz with a typical output capacitance of 2.0 pF. The G suffix indicates an hFE rank of 200 to 400 at IC=2.0 A and VCE=6.0 V. Maximum collector saturation voltage is 0.25 V.

Single Bipolar Transistors Feature Summary

  • Low collector saturation voltage for efficient switching
  • Low output capacitance suitable for high-frequency applications
  • Complementary pair available with the 2SA1980 PNP transistor

Single Bipolar Transistors Applications

  • General-purpose small signal amplification
  • High-frequency amplifier circuits
  • Switching applications requiring low saturation voltage

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the hFE gain bin (G) and packaging type (AP). Confirm RoHS compliance status based on the presence of the 'P' suffix if required by your assembly process. Ensure the component source is authorized to guarantee traceability and avoid counterfeit parts.

Single Bipolar Transistors Selection Notes

Select this part when a high-gain NPN transistor is needed alongside its complementary 2SA1980 PNP counterpart. The TO-92 package suits through-hole designs. Verify that the 200-400 hFE range meets circuit requirements and that the 625 mW power rating accommodates thermal constraints.

Single Bipolar Transistors Part Context

This component belongs to the 2SC5343 series of NPN silicon transistors manufactured by Micro Commercial Components. The series includes variants distinguished by gain rankings and packaging options. It is designed as a general-purpose device often paired with the 2SA1980 for complementary circuit configurations.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SC2712-GR from Toshiba Semiconductor and Storage, or the NXP3875GR from Nexperia USA Inc.

Single Bipolar Transistors FAQ

What does the 'G' suffix indicate?

The 'G' suffix designates the DC current transfer ratio (hFE) rank, which ranges from 200 to 400 under specified test conditions.

Is there a complementary transistor available?

Yes, the 2SA1980 is the designated complementary PNP transistor pair for the 2SC5343 series.

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (V(BR)CBO) is 60 Vdc.

2SC5343-G-AP2SC5343-G-AP

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