Single Bipolar Transistors 2SC5343-O-AP product image

2SC5343-O-AP

  • Description:TRANS NPN 50V 0.15A TO-92
  • Series:-

SKU:84c2a4f51f8b Category: Brand:

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2SC5343-O-AP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS NPN 50V 0.15A TO-92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC5343-O-AP

  • Description:TRANS NPN 50V 0.15A TO-92
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 2A, 6V
  • Power - Max:625 mW
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC5343-O-AP

2SC5343-O-AP

Single Bipolar Transistors Overview

The MCC 2SC5343-O-AP is an NPN silicon transistor housed in a TO-92 package. It features a collector-emitter voltage of 50 V, a collector current of 150 mA, and power dissipation of 625 mW. The device offers a low collector saturation voltage of 0.25 V maximum and a transition frequency of 80 MHz. The 'O' suffix indicates a forward current transfer ratio (hFE) rank of 70 to 140 at 2.0 A and 6.0 V.

Single Bipolar Transistors Feature Summary

  • Low collector saturation voltage for efficient switching
  • Low output capacitance for high-frequency performance
  • Complementary pair available with the 2SA1980 PNP transistor

Single Bipolar Transistors Applications

  • General-purpose amplification
  • High-speed switching circuits
  • Audio amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix '-AP' corresponds to the Ammo Pack configuration containing 20,000 pieces per carton. Confirm that the 'O' suffix matches the required hFE gain range of 70 to 140. Ensure compliance with RoHS standards if applicable, noting that the 'P' suffix designates RoHS compliance while standard versions may differ. Validate authenticity through authorized distributors to avoid counterfeit components.

Single Bipolar Transistors Selection Notes

Select this component when a low saturation voltage and moderate current handling are required in a TO-92 form factor. The 2SC5343-O variant provides a specific gain binning suitable for consistent amplification characteristics. Consider the complementary 2SA1980 for push-pull configurations. Evaluate thermal management capabilities given the 625 mW power dissipation rating in the specified package.

Single Bipolar Transistors Part Context

This part belongs to the Micro Commercial Components discrete semiconductor lineup, specifically within the NPN silicon transistor category. It is designed as a general-purpose device compatible with various electronic applications requiring reliable switching and amplification. The product line emphasizes standard packaging options like bulk and ammo packs for diverse manufacturing needs.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SC5343-Y, 2SC5343-G, and 2SC5343-L, which share identical electrical ratings but feature different hFE gain rankings. Verify pinout compatibility and package dimensions when substituting.

Single Bipolar Transistors FAQ

What does the 'O' suffix indicate in the part number?

The 'O' suffix specifies the forward current transfer ratio (hFE) ranking, which ranges from 70 to 140 under test conditions of IC=2.0A and VCE=6.0V.

Is this transistor part of a complementary pair?

Yes, the 2SC5343 is designed as a complementary pair with the 2SA1980 PNP transistor.

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 50 Vdc when measured at IC=10mAdc and IB=0.

2SC5343-O-AP2SC5343-O-AP

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