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The 2SC5347AE-TD-E is a high-frequency NPN bipolar junction transistor manufactured by onsemi. Designed specifically for RF amplifier applications, this silicon device operates within the radio frequency spectrum. It utilizes a surface-mount CP package configuration suitable for automated assembly processes. The component is characterized as a specialized active element for signal amplification in electronic circuits requiring high-frequency performance capabilities.
This component is officially classified as an End-of-Life product by the manufacturer. Distribution channels indicate restricted availability with limited stock status reported. Verification of current supply chain viability and alternative sourcing strategies is essential before procurement planning due to the discontinued production status.
Designers should evaluate the discontinued status when selecting this part for new hardware development. Verify that existing inventory meets project longevity requirements. Consider functional equivalents from the same manufacturer family if long-term supply stability is a critical constraint for the application lifecycle.
The 2SC5347AE-TD-E belongs to the 2SC5347 series of RF transistors produced by onsemi. This series focuses on high-frequency performance characteristics. The specific suffix indicates the tape-and-reel packaging format intended for surface-mount technology assembly lines.
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the End-of-Life status, engineers must identify compatible alternatives through independent technical parameter matching rather than relying on official manufacturer substitution lists.