2SC5508-A

Overview

The CEL 2SC5508-A is an NPN silicon RF transistor designed for low-noise, high-gain amplification applications. It utilizes a flat-lead 4-pin thin-type Super Minimold (M04) package and incorporates a 25 GHz transition frequency technology. The device operates with a collector-to-emitter voltage of 3.3 V and a maximum collector current of 35 mA. Key electrical characteristics include a typical noise figure of 1.1 dB at 2 GHz and a maximum available power gain of 19 dB under specified bias conditions.

Feature Summary

• Optimized for low-noise and high-gain amplification in RF circuits
• Utilizes 25 GHz transition frequency technology for superior performance
• Features a compact flat-lead 4-pin thin-type Super Minimold (M04) package

Applications

• Low-noise amplifier stages in communication systems
• High-gain amplification modules operating in the UHF to microwave bands
• RF front-end components requiring minimal signal degradation

Procurement Notes

Verify the specific ordering suffix '-A' against the manufacturer's official documentation to confirm packaging details and quantity per unit. Ensure that the component meets RoHS compliance standards as indicated in the datasheet. Confirm pin configuration compatibility with the intended PCB footprint before finalizing procurement orders.

Selection Notes

Select this component for designs prioritizing low noise figures and high gain at frequencies around 2 GHz. Evaluate the thermal resistance parameters to ensure adequate heat dissipation within the M04 package constraints. Consider the absolute maximum ratings, particularly the low collector-to-emitter voltage limit, when designing biasing networks.

Part Context

The 2SC5508 is part of a series of NPN silicon RF transistors manufactured by CEL, acting as a business partner of Renesas Electronics Corporation. This specific model is engineered for high-frequency applications where signal integrity and amplification efficiency are critical requirements.

Replacement Considerations

Consult the manufacturer's official cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence with other RF transistors without verifying pinout, electrical ratings, and package dimensions.