2SC5509-A

Overview

The CEL 2SC5509-A is an NPN silicon RF bipolar transistor designed for high-frequency applications up to 15 GHz. It features a typical noise figure of 1.2 dB and a gain of 12 dB at VCE = 2 V, IC = 10 mA, and f = 2 GHz. The device is housed in a flat-lead 4-pin thin-type Super Minimold package, suitable for medium output power amplification.

Feature Summary

• NPN silicon construction optimized for radio frequency operations
• Low noise figure performance for signal integrity
• High gain characteristics for amplification tasks
• Flat-lead four-pin thin-type packaging

Applications

• Medium output power amplification
• Low-noise amplifier stages
• High-gain RF circuitry

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the specific suffix matches the required variant. Check lifecycle status as this part may be obsolete. Request original datasheets for electrical parameter validation before integration into designs.

Selection Notes

Select this component when low noise and high gain are critical at frequencies around 2 GHz. Ensure the operating voltage and current align with the specified test conditions. Consider the physical dimensions of the flat-lead package for PCB layout compatibility. Evaluate thermal management requirements for medium power applications.

Part Context

This transistor belongs to the family of NPN silicon RF transistors intended for medium output power applications. It serves as a specialized component for radio frequency circuits requiring minimal noise addition and significant signal amplification within defined voltage and current limits.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify cross-reference data with the manufacturer for compatible alternatives if this specific model is unavailable.