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The 2SC5617-T3-A is an NPN small-signal bipolar junction transistor (BJT) designed for RF applications. Manufactured by Renesas Electronics Corporation, this component operates with a maximum collector-emitter voltage of 6V and supports a continuous collector current of 30mA. It features a high transition frequency of 12GHz, enabling effective performance in high-frequency signal processing. The device has a power dissipation rating of 140mW and is housed in a surface-mount 3-MINIMOLD package.
Verify the exact manufacturer part number against official Renesas documentation to ensure authenticity. Confirm that the received components match the specified 3-MINIMOLD package dimensions and pinout configuration. Check for any specific handling requirements related to electrostatic discharge during storage and installation.
Select this component when designing circuits requiring low-voltage operation with high-frequency response capabilities. Ensure the application environment stays within the 6V voltage limit and 30mA current constraints. Consider the thermal management needs associated with the 140mW power dissipation rating in the final PCB layout design.
This transistor belongs to the family of small-signal BJT devices intended for discrete semiconductor applications. It serves as a fundamental building block for analog and RF circuit designs where size and speed are critical factors. The MINIMOLD package allows for efficient space utilization on modern printed circuit boards.
Consult official cross-reference lists for verified substitute part numbers from Renesas or other manufacturers. Ensure any replacement maintains identical electrical characteristics, specifically the 12GHz transition frequency and 6V voltage rating.