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Product Detailed Parameters
- Description：NPN RF TRANSISTOR
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Transistor Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The 2SC5676-T1-A is an NPN silicon RF twin transistor manufactured by Renesas Electronics Corporation. It belongs to the Bipolar RF Transistors category and is designed for high-frequency applications. The component is supplied in a tape-and-reel format, with a standard quantity of 3,000 pieces per reel. Pin 3 (Collector) is oriented toward the perforation side of the tape during packaging. This discrete semiconductor product utilizes a specific surface-mount package configuration suitable for automated assembly processes in RF circuit designs.
Feature Summary
- NPN silicon construction optimized for radio frequency operations
- Twin transistor architecture providing dual active elements in a single package
- Surface-mount design compatible with standard SMT manufacturing lines
Applications
- RF signal amplification stages
- High-frequency communication circuits
- Wireless transmission modules
Procurement Notes
Verify the complete part number including the -T1-A suffix to ensure correct packaging orientation. Confirm that the supplier provides genuine Renesas Electronics Corporation products. Check datasheet specifications for absolute maximum ratings before integration. Ensure storage conditions comply with moisture sensitivity levels defined in the official documentation.
Selection Notes
Select this component when a dual NPN RF transistor configuration is required for space-constrained designs. Consider the twin transistor topology for balanced differential circuits or push-pull amplifier stages. Evaluate the specific RF performance characteristics against application requirements. Verify package compatibility with existing PCB footprints and assembly equipment capabilities.
Part Context
This device is part of Renesas Electronics Corporation's discrete semiconductor portfolio, specifically within the bipolar RF transistor segment. It represents a specialized solution for high-frequency analog applications requiring compact packaging. The twin transistor design offers advantages in matched parameter tracking compared to discrete individual transistors.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult official cross-reference lists from Renesas Electronics Corporation for verified alternatives. Ensure any replacement matches electrical specifications and physical dimensions.
