SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NE678M04-T2-A is a medium power NPN silicon high frequency transistor manufactured by CEL. It utilizes NEC's HFT3 wafer process and features a transition frequency of 12 GHz, suitable for applications from 100 MHz to 3 GHz. The device provides an output power at 1 dB compression point (P1dB) of 18 dBm at 1.8 GHz with low voltage and current requirements. It offers linear gain of 13 dB at 1.8 GHz and maximum available gain of 13.5 dB at 2 GHz. Packaged in the M04 style with a SOT-343 footprint and height of 0.59 mm, it supports collector currents up to 100 mA and total power dissipation of 205 mW.
Verify the part number against official manufacturer documentation to confirm compatibility. Ensure that the ordering suffix matches specific environmental or packaging requirements. Confirm availability status as distribution channels may vary. Check datasheet specifications for absolute maximum ratings before integration.
Select this component based on required transition frequency and output power capabilities. Evaluate thermal resistance and power dissipation limits for the intended operating environment. Consider the SOT-343 footprint constraints during PCB layout. Verify biasing conditions align with typical performance curves for desired gain and efficiency.
This component corresponds to the EIAJ registration number 2SC5753. It is distributed by California Eastern Laboratories (CEL) as the exclusive North American agent for NEC RF, microwave, and optoelectronic semiconductors. The part represents a medium power NPN silicon high frequency transistor designed for RF applications.
No public confirmed substitute part numbers are documented in the provided source material.