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The CEL 2SC5754-T2-A is an NPN silicon RF transistor designed for medium output power amplification. It operates within the 460 MHz to 2.4 GHz frequency range and utilizes UHS0-HV technology with a transition frequency of 25 GHz. The device provides a typical saturated output power of +26 dBm at 1.8 GHz with a collector efficiency of 60%. It is housed in a flat-lead 4-pin thin-type super minimold (M04) package, which supports reliable surface-mount assembly.
Verify component authenticity against official manufacturer documentation before integration. Confirm that the specific ordering suffix matches the required package configuration. Ensure all handling procedures comply with electrostatic discharge protection standards during storage and installation.
Select this component when designing circuits requiring stable medium power performance up to 2.4 GHz. Evaluate thermal management requirements based on the specified collector efficiency. Verify that the M04 package dimensions align with the target printed circuit board layout constraints.
This part belongs to the Silicon Bipolar Transistors category within the California Eastern Laboratories portfolio. It serves as a discrete solution for RF front-end designs, distinct from integrated switch or amplifier ICs. The product line focuses on providing high-frequency discrete components for wireless connectivity markets.
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains equivalent transition frequency and output power capabilities.