2SC5868TLR

Single Bipolar Transistors Overview

The Rohm Semiconductor 2SC5868TLR is an NPN silicon epitaxial planar transistor designed for medium power applications. It operates with a collector-emitter voltage of 60V and a continuous collector current of 0.5A. Key electrical characteristics include a typical saturation voltage of 75mV at IC=100mA and IB=10mA, and a transition frequency of up to 390MHz. The device features high-speed switching capabilities with a typical fall time of 80ns. It is packaged in the TSMT3 form factor and supplied in tape and reel quantities of 3000 pieces.

Single Bipolar Transistors Feature Summary

• High speed switching performance optimized for rapid signal transitions
• Low saturation voltage to minimize power loss during conduction
• Strong discharge capability suitable for driving inductive and capacitive loads

Single Bipolar Transistors Applications

• Small signal low frequency amplifier circuits
• High speed switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TL indicates the tape and reel packaging configuration containing 3000 units per basic ordering unit. Confirm the package type matches the TSMT3 external dimensions provided in the datasheet. Ensure compatibility with recommended land patterns for thermal management and electrical connection integrity during assembly processes.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring moderate voltage handling and fast switching speeds. Consider the DC current gain ranks Q (120-270) and R (180-390) when designing bias networks. Evaluate the safe operating area curves for pulsed operation conditions to ensure reliability under transient load scenarios.

Single Bipolar Transistors Part Context

This NPN transistor complements the 2SA2090 PNP counterpart, facilitating push-pull or complementary circuit configurations. The TSMT3 package offers a compact footprint suitable for space-constrained printed circuit board layouts. Its epitaxial planar structure supports stable operation across a wide junction temperature range from -55°C to 150°C.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

Single Bipolar Transistors FAQ

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (BVCBO) is 60V.

What is the typical storage time for this transistor?

The typical storage time (Tstg) is 70ns under the specified test conditions.

How does the DC current gain vary with collector current?

The DC current gain (hFE) varies with collector current as illustrated in the characteristic curves, with minimum values defined by rank Q (120) or R (180).