2SC5880TV2Q

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SC5880TV2Q is an NPN silicon epitaxial planar power transistor designed for high-speed switching applications. It features a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 2A, with a maximum power dissipation of 1W at 25°C ambient temperature. The device exhibits a typical turn-on time of 35ns and a low saturation voltage of 200mV at IC=1.0A. Packaged in the SOT-89 format, it supports taping specifications for automated assembly.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with a typical fall time of 35ns
• Low saturation voltage to minimize conduction losses
• Strong discharge power handling for inductive and capacitive loads

Single Bipolar Transistors Applications

• Low frequency amplifier circuits
• High speed switching modules
• Inductive load driving systems

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TV2 against official ROHM documentation to confirm the taping packaging configuration. Ensure that the component meets the required thermal management standards for the intended operating environment. Cross-reference the datasheet revision date to guarantee access to the most current electrical characteristic curves and absolute maximum ratings before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring fast switching speeds combined with moderate current handling capabilities. The low saturation voltage makes it suitable for efficiency-conscious designs. Verify that the 60V collector-emitter rating aligns with the system's peak voltage requirements. Consider the SOT-89 package dimensions for PCB layout constraints and thermal dissipation needs.

Single Bipolar Transistors Part Context

This part belongs to the 2SC5880 series of NPN power transistors manufactured by ROHM Semiconductor. It serves as a complementary device to the 2SA2093 PNP transistor, facilitating push-pull or bridge configurations in amplifier and switching topologies. The series is engineered for robust performance in general-purpose electronic applications requiring reliable high-speed operation.

Single Bipolar Transistors Replacement Considerations

Consult official ROHM documentation for confirmed substitute part numbers. No public substitutes are listed in the provided source material.

Single Bipolar Transistors FAQ

What is the typical transition frequency (fT) of the 2SC5880?

The typical transition frequency is 50MHz under conditions of IC=100mA and VCE=10V.

How does the 2SC5880 handle inductive loads?

It provides strong discharge power specifically designed to manage the energy released by inductive and capacitive loads during switching transitions.

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (BVCBO) is 60V when measured at IC=100μA.