2SC6017-H-TL-E

Single Bipolar Transistors Overview

The 2SC6017-H-TL-E is an NPN epitaxial planar silicon transistor designed for high-current switching applications. It features a maximum collector current of 10 A and a collector-to-emitter voltage rating of 50 V. The device supports a transition frequency of 200 MHz, suitable for high-frequency operations. Key electrical characteristics include a minimum DC current gain (hFE) of 250 and a maximum power dissipation of 15 W at 25°C case temperature. The component operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Adoption of MBIT process technology
• Large current capacitance capability
• Low collector-to-emitter saturation voltage
• High-speed switching performance

Single Bipolar Transistors Applications

• DC/DC converter circuits
• Relay driver stages
• Lamp driver modules
• Motor driver systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'H-TL-E' against official Sanyo documentation to confirm package type and tape/reel specifications. Ensure the component matches the required NPN epitaxial planar silicon construction. Cross-reference absolute maximum ratings with system design limits to prevent thermal or electrical overstress during operation.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high current handling up to 10 A and fast switching speeds. Consider the low saturation voltage for improved efficiency in power management circuits. Evaluate thermal management requirements given the 15 W power dissipation limit and ensure adequate heat sinking for sustained high-load conditions.

Single Bipolar Transistors Part Context

This part belongs to the Sanyo discrete semiconductor transistor family, specifically engineered for robust switching performance. It utilizes advanced fabrication processes to achieve high current density and reliability. The device is intended for use in modern electronic systems demanding efficient power control and rapid response times.

Single Bipolar Transistors Replacement Considerations

Consult official Sanyo substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing. Generic substitutes may not match the specific MBIT process characteristics or saturation voltage profiles.