2SC6024-TL-E

Overview

The 2SC6024-TL-E is an NPN epitaxial planar silicon transistor designed for UHF to C band low-noise amplifier and oscillator applications. It features a low noise figure of 1.2 dB typical at 2 GHz and high cut-off frequencies reaching 14 GHz at VCE=1V and 21 GHz at VCE=3V. The device operates with low voltage requirements and provides high gain, with |S21e|² up to 12.5 dB at 2 GHz. It utilizes an ultraminiature thin flat leadless package measuring 1.4mm x 0.8mm x 0.6mm. Absolute maximum ratings include a collector-to-emitter voltage of 3.5V, collector current of 35 mA, and collector dissipation of 120 mW.

Feature Summary

• Ultraminiature and thin flat leadless package design
• Low noise figure suitable for sensitive RF front-ends
• High cut-off frequency supporting UHF to C band operations
• High forward transfer gain for efficient amplification

Applications

• UHF to C band low-noise amplifiers
• RF oscillator circuits
• Microwave communication systems

Procurement Notes

Verify the manufacturer origin carefully, as the datasheet indicates SANYO Electric Co., Ltd. while the prompt specifies onsemi. Confirm the exact ordering suffix matches the required tape-and-reel or bulk packaging variant. Ensure the component meets RoHS compliance standards if required by your manufacturing process. Cross-reference the marking code NM with the physical device to confirm authenticity.

Selection Notes

Select this component when designing circuits requiring minimal noise addition in the UHF to C band spectrum. Consider the low collector-to-emitter voltage rating of 3.5V when establishing biasing networks. The small package dimensions necessitate precise PCB layout and soldering techniques. Evaluate the thermal management capabilities given the 120 mW power dissipation limit in your specific enclosure environment.

Part Context

This part number represents the NPN epitaxial planar silicon transistor originally manufactured by SANYO Electric Co., Ltd. The 'TL-E' suffix typically denotes a specific packaging or taping configuration, though official documentation primarily references the base 2SC6024 model. The device is categorized under discrete semiconductor transistors intended for high-frequency analog signal processing tasks.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult the original manufacturer's documentation for recommended cross-reference components that match the specific electrical characteristics and package footprint.

FAQ

What is the typical noise figure of the 2SC6024 at 2 GHz?

The typical noise figure is 1.2 dB when measured at VCE=1V, IC=5mA, and f=2GHz.

What are the absolute maximum ratings for collector current?

The absolute maximum collector current (IC) is rated at 35 mA at an ambient temperature of 25°C.

How does the cut-off frequency vary with collector-emitter voltage?

The cut-off frequency (fT) is typically 14 GHz at VCE=1V and increases to 21 GHz at VCE=3V.