2SCR522EBTL

Single Bipolar Transistors Overview

The 2SCR522EBTL is a small-signal NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It is designed for general-purpose amplification applications and features a surface-mount EMT3F (SOT-416FL) package. Key electrical parameters include a maximum collector-emitter voltage of 20V, a continuous collector current of 200mA, and a power dissipation rating of 150mW. The device exhibits a gain bandwidth product (fT) of 400MHz and supports a maximum operating temperature of +150°C.

Single Bipolar Transistors Feature Summary

• NPN silicon construction optimized for general-purpose signal amplification
• Compact SMD EMT3F (SOT-416FL) footprint for space-constrained designs
• High-frequency performance with 400MHz gain bandwidth product
• Extended thermal capability supporting operation up to +150°C

Single Bipolar Transistors Applications

• General-purpose low-power signal amplification circuits
• Switching applications in consumer electronics
• Audio pre-amplifier stages
• Signal processing in portable devices

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix EBTL against the manufacturer's latest datasheet to confirm tape-and-reel packaging specifications. Ensure that the EMT3F pinout matches the target PCB footprint design. Confirm RoHS compliance status through official documentation before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with moderate current handling and high-speed switching capabilities is required. The 20V voltage rating suits low-voltage logic interfaces. Consider the 150mW thermal limit for power budget calculations in enclosed environments compared to higher-power alternatives.

Single Bipolar Transistors Part Context

This part belongs to ROHM's series of small-signal bipolar transistors intended for mass-market electronic equipment. The EMT3F package represents a standard industry form factor for surface-mount assembly, facilitating automated placement in high-volume manufacturing processes for consumer goods.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same voltage and current ratings should be evaluated based on package compatibility and hFE binning. Verify that alternative NPN transistors offer comparable fT characteristics to maintain circuit stability in high-frequency applications.