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2SCR533PHZGT100 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 50V 3A SOT-89. Review the specifications below when checking this part for your BOM.
The ROHM Semiconductor 2SCR533PHZGT100 is a single NPN bipolar junction transistor (BJT) designed for low VCE(sat) applications. It operates with a collector-emitter voltage of 50V and supports a continuous collector current of 3A. The device features a DC current gain (hFE) ranging from 180 to 450 at -50mA and -2V. It dissipates up to 0.5W of power in an SOT-89 (TO-243) surface-mount package. The component complies with AEC-Q101 automotive standards and functions within a storage temperature range of -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's datasheet to confirm packaging type, as variations may exist between tape-and-reel configurations. Ensure the procurement channel provides official documentation to validate RoHS compliance and AEC-Q101 certification status before integration into production designs.
Select this component when a high-current NPN transistor with low saturation voltage is required in a compact SOT-89 package. It is suitable for designs needing robust performance under automotive environmental conditions. Compare hFE ranges and power dissipation limits against circuit requirements to ensure adequate thermal management and signal fidelity.
This part belongs to the 2SCR series of NPN silicon planar transistors manufactured by ROHM Semiconductor. The series focuses on medium-power applications requiring reliable operation in surface-mount environments. The 2SCR533 variant specifically targets drivers and amplifiers where low voltage drop and high gain are critical for system efficiency.
Consult the official ROHM datasheet for direct pin-compatible substitutes within the same series. Verify that any alternative component matches the 50V VCEO, 3A Ic, and SOT-89 package constraints to maintain circuit integrity without redesign.
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