2SD1047P-E

Single Bipolar Transistors Overview

The 2SD1047P-E is a high-power NPN epitaxial planar bipolar transistor manufactured using BiT-LA technology. It features a collector-emitter breakdown voltage of 140 V, a continuous collector current of 12 A, and a maximum power dissipation of 100 W. The device exhibits a typical transition frequency (fT) of 20 MHz and is housed in a TO-3 plastic molded package designed for through-hole mounting.

Single Bipolar Transistors Feature Summary

• Utilizes BiT-LA technology to achieve good gain linearity behavior suitable for linear amplifier applications.
• Features a one-point fixing type plastic molded package that allows for easy mounting and interchangeability with standard TO-3 configurations.
• Incorporates on-chip ballast resistance to provide a wide safe operating area (ASO).
• Demonstrates excellent high-frequency response with favorable dependence of fT on collector current.

Single Bipolar Transistors Applications

• Audio power amplifier output stages
• DC to DC converter circuits
• High-voltage switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer origin, as the 2SD1047 designation has been produced by multiple vendors including Sanyo Semicon Device and others. Confirm that the P-E suffix corresponds to the required plastic TO-3 package variant rather than the metal can version. Ensure the component meets the necessary RoHS compliance standards for your assembly process before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage handling up to 140 V combined with significant current capacity of 12 A. The integrated ballast resistance simplifies parallel operation for higher power requirements. Consider the thermal management needs associated with the 100 W dissipation rating and ensure the PCB layout supports the through-hole mounting style effectively.

Single Bipolar Transistors Part Context

This part belongs to the family of high-power NPN silicon transistors designed for robust performance in audio and power conversion systems. The use of BiT-LA technology distinguishes it from standard bipolar transistors by offering improved linearity characteristics essential for high-fidelity audio amplification and precise signal processing tasks.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SB817 complementary PNP transistor for push-pull configurations. Other compatible high-power NPN devices with similar 140 V and 12 A ratings may be considered if pinout and package dimensions match the TO-3 plastic form factor.