2SD1145G-AE

Single Bipolar Transistors Overview

The 2SD1145G-AE is a single NPN bipolar junction transistor manufactured by onsemi. It features a collector-emitter voltage rating of 20 V and a continuous collector current capacity of 5 A. The device supports a transition frequency of 120 MHz, suitable for high-speed switching applications. Power dissipation is rated at 900 mW under standard conditions. The component utilizes a 3-MP through-hole package, facilitating integration into printed circuit boards requiring axial or radial lead configurations.

Single Bipolar Transistors Feature Summary

• NPN configuration optimized for general-purpose switching and amplification tasks
• High current handling capability with 5 A collector current rating
• Through-hole mounting structure for robust mechanical connection

Single Bipolar Transistors Applications

• General-purpose electronic switching circuits
• Amplifier stages in low-power audio or signal processing systems
• Driver circuits for small-signal loads

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix AE against official onsemi documentation to confirm exact electrical tolerances and packaging specifications. Ensure compatibility with existing board layouts for the 3-MP through-hole footprint. Confirm RoHS compliance status if required by project regulations. Cross-reference the manufacturer part number with distributor listings to validate authenticity and availability before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a low-voltage, medium-current NPN transistor is required for through-hole assembly. The 20 V rating limits suitability to low-voltage logic or power rails. Consider the 120 MHz frequency response for application bandwidth requirements. Evaluate thermal management needs given the 900 mW power dissipation limit in the specified package type.

Single Bipolar Transistors Part Context

This component belongs to the single bipolar transistor category within onsemi's discrete semiconductor portfolio. It serves as a fundamental active element for controlling current flow in electronic circuits. The 3-MP package distinguishes it from surface-mount alternatives, catering to legacy or high-reliability through-hole design methodologies common in industrial and consumer electronics.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference data for direct substitutes. Verify pinout compatibility and electrical parameter equivalence for any alternative NPN transistors. Ensure replacement parts meet the same voltage, current, and package constraints.