Single Bipolar Transistors 2SD1163A-E product image

2SD1163A-E

$1.07
  • Description:TRANS NPN 150V 7A TO-220AB
  • Series:-

SKU:28eafa293950 Category: Brand:

  
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2SD1163A-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is TRANS NPN 150V 7A TO-220AB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1163A-E

  • Description:TRANS NPN 150V 7A TO-220AB
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):7:00 AM
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 500mA, 5A
  • Current - Collector Cutoff (Max):5mA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 5A, 5V
  • Power - Max:40 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1163A-E

2SD1163A-E

Single Bipolar Transistors Overview

The Renesas 2SD1163A-E is an NPN silicon epitaxial power transistor designed for medium-power linear and switching applications. It features a TO-220C package with low collector saturation voltage, making it suitable for TV horizontal deflection output circuits. The device operates as a single-element PNP configuration variant in some contexts but is primarily defined as an NPN power transistor with specific thermal and electrical ratings for industrial use.

Single Bipolar Transistors Feature Summary

  • Low collector saturation voltage for efficient signal processing
  • Medium power capability for linear switching applications
  • Optimized for TV horizontal deflection output stages

Single Bipolar Transistors Applications

  • TV horizontal deflection output circuits
  • Medium power linear switching applications
  • General purpose power amplification

Single Bipolar Transistors Procurement Notes

Verify the exact suffix designation against the manufacturer's current datasheet to ensure compatibility with the intended application requirements. Confirm RoHS compliance status and moisture sensitivity level prior to procurement. Ensure the ordering code matches the specific package and pinout configuration required by the design.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust NPN power handling with minimal saturation loss. Consider the thermal resistance characteristics of the TO-220C package for heat dissipation needs. Evaluate the maximum collector current and voltage ratings against the peak load conditions of the target circuit to ensure reliable operation under all operating temperatures.

Single Bipolar Transistors Part Context

This part belongs to the family of discrete power transistors manufactured by Renesas Electronics. It serves as a fundamental building block for power management and signal amplification stages in consumer electronics and industrial equipment. The component complements other discrete semiconductor offerings in the manufacturer's portfolio focused on reliability and performance.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent NPN power transistors in TO-220 packages. Verify that any alternative device meets or exceeds the original specifications for collector current, voltage rating, and saturation voltage to maintain circuit integrity.

2SD1163A-E2SD1163A-E
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