2SD1207U

Single Bipolar Transistors Overview

The onsemi 2SD1207U is an NPN epitaxial planar silicon transistor designed for large-current switching applications. It features a collector-to-emitter voltage rating of 50 V and a continuous collector current capacity of 2 A, with pulse ratings reaching 4 A. The device utilizes FBET and MBIT processing to achieve low saturation voltage and wide safe operating area (ASO). Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 560 depending on the grade, a gain-bandwidth product of 150 MHz, and a collector-to-emitter saturation voltage of 0.4 V maximum at 1 A collector current.

Single Bipolar Transistors Feature Summary

• Utilizes FBET and MBIT processed technology for enhanced performance.
• Provides low saturation voltage for efficient switching operations.
• Offers large current capacity and wide safe operating area.

Single Bipolar Transistors Applications

• Power supplies
• Relay drivers
• Lamp drivers
• Automotive wiring

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'U' against official documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with existing PCB footprints and thermal management requirements. Confirm RoHS compliance status and lead-free manufacturing details as per the latest datasheet revision. Validate that the selected variant meets the required hFE grading for your specific circuit design needs.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring robust NPN switching with high current handling capabilities. Consider the hFE ranking (R, S, T, U) based on the required base drive current and gain consistency. Evaluate the thermal dissipation limits relative to ambient temperature conditions. Ensure the 50 V breakdown voltage provides sufficient margin for the intended load voltage spikes.

Single Bipolar Transistors Part Context

This NPN transistor belongs to a family of power bipolar transistors manufactured using advanced epitaxial planar silicon processes. It is part of a paired series including the PNP counterpart 2SB892, offering complementary switching solutions. The device is optimized for linear amplifier and switching applications, leveraging proprietary processing techniques to minimize saturation losses while maintaining high breakdown voltages.

Single Bipolar Transistors Replacement Considerations

Direct replacements may include other NPN transistors with similar 50V/2A ratings and TO-92 packages. Verify pinout compatibility and thermal resistance values. Check if alternative parts offer comparable hFE grades and saturation voltages to ensure circuit performance remains unchanged without redesigning the base drive network.

Single Bipolar Transistors FAQ

What is the maximum collector current for the 2SD1207U?

The maximum continuous collector current is 2 A, with a pulse collector current rating of 4 A.

How is the DC current gain graded?

The device is graded by hFE at 100 mA into ranks R (100-200), S (140-280), T (200-400), and U (280-560).

What is the typical gain-bandwidth product?

The gain-bandwidth product (fT) is typically 150 MHz when measured at VCE=10V and IC=50mA.