2SD1223(TE16L1,NQ)

Single Bipolar Transistors Overview

The Toshiba 2SD1223 is a silicon NPN epitaxial planar transistor utilizing the PCT process, configured as a Darlington pair. It provides high DC current gain and low saturation voltage for switching applications. Key electrical ratings include a collector-emitter voltage of 80 V, a collector-base voltage of 100 V, and a maximum collector current of 4 A. The device features a minimum DC current gain (hFE) of 2000 at IC = 1 A and VCE = 2 V. Power dissipation reaches 15 W at Tc = 25°C. It is housed in a JEDEC TO-92 package with three pins.

Single Bipolar Transistors Feature Summary

• Darlington configuration providing exceptionally high DC current gain
• Low collector-emitter saturation voltage for efficient switching
• High-speed switching characteristics suitable for pulse motor drives

Single Bipolar Transistors Applications

• Hammer drive circuits
• Pulse motor drive systems
• Power amplifier applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status by checking the marking on the component body or contacting the manufacturer directly, as indicated in the datasheet. Confirm that the ordering suffix matches the required environmental specifications. Ensure the procurement channel sources genuine Toshiba Semiconductor products to guarantee adherence to absolute maximum ratings and reliability standards.

Single Bipolar Transistors Selection Notes

Select this component when high current amplification is required from a small base drive signal. The Darlington structure offers superior hFE compared to standard single transistors. Verify that the application operates within the 80 V collector-emitter limit and 4 A collector current threshold. Consider thermal management requirements, as power dissipation decreases linearly with increasing case temperature above 25°C.

Single Bipolar Transistors Part Context

This part belongs to the family of silicon NPN epitaxial transistors manufactured using Toshiba's PCT process. It serves as the complementary counterpart to the 2SB908 PNP transistor. The device is designed for general-purpose switching and amplification tasks where high gain and moderate power handling are necessary.

Single Bipolar Transistors Replacement Considerations

The official complementary part number is 2SB908. When substituting, ensure the replacement maintains equivalent Darlington configuration, voltage ratings, and current capabilities to preserve circuit performance.