Single Bipolar Transistors 2SD1276AP product image

2SD1276AP

  • Description:TRANS NPN DARL 80V 4A TO-220F-A1
  • Series:-

SKU:a29ba566228f Category: Brand:

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2SD1276AP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN DARL 80V 4A TO-220F-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1276AP

  • Description:TRANS NPN DARL 80V 4A TO-220F-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:4V @ 20mA, 5A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:4000 @ 3A, 3V
  • Power - Max:2 W
  • Frequency - Transition:20MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220F-A1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1276AP

2SD1276AP

Single Bipolar Transistors Overview

The Panasonic 2SD1276AP is a silicon NPN triple diffusion planar type darlington power transistor designed for power amplification. It operates in the TO-220F-A1 package with three pins (Base, Collector, Emitter). The device supports a collector current of 4A and peak collector current of 8A. Electrical ratings include a collector-emitter voltage of 60V and a collector-base voltage of 60V. The component features a minimum forward current transfer ratio (hFE) of 1,000 at IC = 3A. Thermal characteristics specify a junction temperature up to 150°C and collector power dissipation of 40W at TC = 25°C.

Single Bipolar Transistors Feature Summary

  • High forward current transfer ratio hFE
  • High-speed switching capability
  • Full-pack package allowing installation to heat sink with one screw

Single Bipolar Transistors Applications

  • Power amplification circuits
  • General electronic equipment
  • Office equipment
  • Communications equipment

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'P' against official Panasonic documentation to confirm if it denotes a specific ranking or packaging variant distinct from the standard 2SD1276A. Check the manufacturer's lifecycle status page for maintenance or discontinuation notices before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high gain darlington configurations in power amplification. Ensure thermal management meets the 40W dissipation requirement at 25°C case temperature. Verify that the 60V collector-emitter voltage rating aligns with the circuit's maximum operating conditions.

Single Bipolar Transistors Part Context

The 2SD1276 series consists of silicon NPN darlington transistors manufactured by Panasonic Electronic Components. It is part of a family including the 2SD1276 and 2SD1276A variants, differentiated primarily by voltage ratings. The complementary PNP counterpart is the 2SB0950 series.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SB0950 and 2SB0950A as complementary parts. No direct substitute part numbers are listed in the provided documentation.

2SD1276AP2SD1276AP

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